Simulating 1.30 µm Optical Gain in Type-I InGaAsN/GaAs Nano-Heterostructure

Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to ...

Optical characterization of type-II CdTe/CdSe/CdTe heterostructure nanorods

The optical characteristics of an indirect type II transition in a series of size and shape-controlled linear CdTe/CdSe/CdTe heterostructure nanorods was studied by steady state and time resolved photoluminescence spectra. The energy and lifetime of the photoluminescence from the charge-separated band structure can be tuned by the band edges of the nanorods. Our results show a size-dependent tr...

SIMULATING CONTINUOUS FUZZY SYSTEMS: I

In previous studies we first concentrated on utilizing crisp simulationto produce discrete event fuzzy systems simulations. Then we extendedthis research to the simulation of continuous fuzzy systems models. In this paperwe continue our study of continuous fuzzy systems using crisp continuoussimulation. Consider a crisp continuous system whose evolution depends ondifferential equations. Such a ...

Optical gain at 1.54 μm in erbium-doped silicon nanocluster sensitized waveguide

Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications

The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semiconductor optical amplifier (HELLISH-VCSOA) device is based on Ga0.35In0.65 N0.02As0.08/GaAs material for operation in the 1.3-μm window of the optical communications. The device has undoped distributed Bragg reflectors (DBRs). Therefore, problems such as those associated with refractive index contra...